Rohm & TSMC join forces on GaN semiconductor technology
TSMC will integrate Rohm‘s device development technology with its GaN-on-silicon process technology. GaN technology is valued for its potential environmental benefits in automotive applications, such as on-board chargers and inverters for electric vehicles.
In late 2023, for example, the EU research project ALL2GaN, led by Infineon Austria, aimed to exploit the energy-saving potential of highly efficient power semiconductors made of gallium nitride (GaN) so that they can be easily and quickly integrated into many applications. Other companies have already recognised the potential of GaN: The German supplier Vitesco agreed on a cooperation with the Canadian specialist GaN Systems in November 2021. According to Vitesco, GaN semiconductors can be more economical than SiC semiconductors in system terms.
“GaN devices, capable of high-frequency operation, are highly anticipated for their contribution to miniaturisation and energy savings, which can help achieve a decarbonised society. Reliable partners are crucial for implementing these innovations in society, and we are pleased to collaborate with TSMC, which possesses world-leading advanced manufacturing technology,” said Katsumi Azuma, Member of the Board and Senior Managing Executive Officer at Rohm. “In addition to this partnership, by providing user-friendly GaN solutions that include control ICs to maximize GaN performance, we aim to promote the adoption of GaN in the automotive industry.”
TSMC recently broke ground on its production facility in Dresden, Germany. Rohm is also starting its largest facility to date in Kunitomi, in its home country of Japan. Semiconductor production is currently very concentrated around Taiwan, and efforts have been made globally to alleviate bottlenecks and geopolitical strain by diversifying production locations.
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